Material Quality in GaAs-on-Si Grown by Metalorganic...

Japanese Journal of Applied Physics 1990 / 4 Vol. 29; Iss. Part 2, No

Material Quality in GaAs-on-Si Grown by Metalorganic Molecular Beam Epitaxy

Uneta, Makoto, Watanabe, Yoshio, Ohmachi, Yoshiro
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L649
Date:
April, 1990
File:
PDF, 769 KB
1990
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