Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic...

Japanese Journal of Applied Physics 1990 / 4 Vol. 29; Iss. Part 2, No

Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy

Akatsuka, Takeshi, Miyake, Ryuji, Nozaki, Shinji, Yamada, Takumi, Konagai, Makoto, Takahashi, Kiyoshi
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.29.l537
Date:
April, 1990
File:
PDF, 477 KB
1990
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