AsH 3 Pre-Exposure Conditions...

Japanese Journal of Applied Physics 1990 / 4 Vol. 29; Iss. Part 2, No

AsH 3 Pre-Exposure Conditions for GaAs Epitaxial Growth on Si by Melalorganic Chemical Vapor Deposition

Fujita, Kazuhisa, Shiba, Yasunari, Yamamoto, Toshiro
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.29.l534
Date:
April, 1990
File:
PDF, 362 KB
1990
Conversion to is in progress
Conversion to is failed