Compensation Mechanism in Heavily Si-Doped GaAs Grown by...

Japanese Journal of Applied Physics 1990 / 4 Vol. 29; Iss. Part 2, No

Compensation Mechanism in Heavily Si-Doped GaAs Grown by MBE

Uematsu, Masashi, Maezawa, Koichi
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.29.l527
Date:
April, 1990
File:
PDF, 437 KB
1990
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