Reduction of Dislocation Density in Impurity-Doped GaAs...

Japanese Journal of Applied Physics 1990 / 6 Vol. 29; Iss. Part 2, No

Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy

Lee, Jong-Lam, Kobayashi, Hidetoshi, Tanigawa, Shoichiro, Kawabe, Mitsuo
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L860
Date:
June, 1990
File:
PDF, 889 KB
1990
Conversion to is in progress
Conversion to is failed