Study of defects created by swift Xe ions in 6H α SiC...

Radiation Effects and Defects in Solids 1993 / 3 Vol. 126; Iss. 1

Study of defects created by swift Xe ions in 6H α SiC single crystals

Lhermitte-Sebire, I., Chermant, J. L., Levalois, M., Paumier, E., Vicens, J.
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Volume:
126
Language:
english
Journal:
Radiation Effects and Defects in Solids
DOI:
10.1080/10420159308219702
Date:
March, 1993
File:
PDF, 419 KB
english, 1993
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