OMVPE Growth and Characterization of GaInP on GaAs Using...

Japanese Journal of Applied Physics 1990 / 7 Vol. 29; Iss. Part 2, No

OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source

Takeda, Yoshikazu, Araki, Soichiro, Takemi, Masayoshi, Noda, Susumu, Sasaki, Akio
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1040
Date:
July, 1990
File:
PDF, 447 KB
1990
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