Temperature Dependence of the Reflected Trimethylgallium...

Japanese Journal of Applied Physics 1990 / 7 Vol. 29; Iss. Part 2, No

Temperature Dependence of the Reflected Trimethylgallium Flux Intensity from a GaAs Surface in Metal-Organic Molecular Beam Epitaxy Measured by Mass Spectrometry

Ohki, Yoshimasa, Hiratani, Yuji
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1036
Date:
July, 1990
File:
PDF, 575 KB
1990
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