A Study of Cold Dopant Sources for Gas Source MBE: The use...

Japanese Journal of Applied Physics 1990 / 7 Vol. 29; Iss. Part 2, No

A Study of Cold Dopant Sources for Gas Source MBE: The use of Disilane as an N-Type Dopant of Al x Ga 1- x As ( x =0-0.28) and Trimethylgallium as a P-Type Dopant of GaAs

Sandhu, Adarsh, Fujii, Toshio, Ando, Hideyasu, Ishikawa, Hideaki
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1033
Date:
July, 1990
File:
PDF, 497 KB
1990
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