Incorporation Behavior of Si Atoms in the Molecular Beam...

Japanese Journal of Applied Physics 1990 / 8 Vol. 29; Iss. Part 2, No

Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates

Okano, Yoshimichi, Shigeta, Mitsuhiro, Seto, Hiroyuki, Katahama, Hisashi, Nishine, Shiro, Fujimoto, Isao
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.29.l1357
Date:
August, 1990
File:
PDF, 599 KB
1990
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