Growth Mechanism in Migration-Enhanced Epitaxy of AlAs on...

Japanese Journal of Applied Physics 1990 / 8 Vol. 29; Iss. Part 2, No

Growth Mechanism in Migration-Enhanced Epitaxy of AlAs on Misoriented GaAs(111)B Substrates

Takano, Yasushi, Torihata, Teiji, Kawai, Takahiro, Pak, Kangsa, Yonezu, Hiroo
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1346
Date:
August, 1990
File:
PDF, 539 KB
1990
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