Effect of AlAs Buffer Layers on Epitaxial Growth of GaAs on...

Japanese Journal of Applied Physics 1990 / 8 Vol. 29; Iss. Part 2, No

Effect of AlAs Buffer Layers on Epitaxial Growth of GaAs on Si (100)

Kobayashi, Hidetoshi, Kawabe, Mitsuo
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1342
Date:
August, 1990
File:
PDF, 809 KB
1990
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