High-Quality n-GaInAs Grown by OMVPE Using Si...

Japanese Journal of Applied Physics 1990 / 10 Vol. 29; Iss. Part 1, No

High-Quality n-GaInAs Grown by OMVPE Using Si 2 H 6 by High-Velocity Flow

Miyamoto, Yasuyuki, Kohtoku, Masaki, Yamaura, Shinji, Furuya, Kazuhito
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.1910
Date:
October, 1990
File:
PDF, 276 KB
1990
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