One-Step Growth of GaAs Layers on Si Substrates by...

Japanese Journal of Applied Physics 1990 / 10 Vol. 29; Iss. Part 2, No

One-Step Growth of GaAs Layers on Si Substrates by Low-Pressure MOCVD

Sato, Kiyotaka, Togura, Kenji
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1735
Date:
October, 1990
File:
PDF, 1.41 MB
1990
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