Characterization of Column III Vacancies in Al...

Japanese Journal of Applied Physics 1990 / 10 Vol. 29; Iss. Part 2, No

Characterization of Column III Vacancies in Al x Ga 1- x As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons

Lee, Jong-Lam, Wei, Long, Tanigawa, Shoichiro, Nakagawa, Tadashi, Ohta, Kimihiro
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1763
Date:
October, 1990
File:
PDF, 666 KB
1990
Conversion to is in progress
Conversion to is failed