GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown...

Japanese Journal of Applied Physics 1990 / 10 Vol. 29; Iss. Part 2, No

GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE

Nozaki, Shinji, Miyake, Ryuji, Yamada, Takumi, Konagai, Makoto, Takahashi, Kiyoshi
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1731
Date:
October, 1990
File:
PDF, 587 KB
1990
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