Structural Properties of (GaAs)...

Japanese Journal of Applied Physics 1991 / 4 Vol. 30; Iss. Part 2, No

Structural Properties of (GaAs) 1- x (Si 2 ) x Layers on GaAs(100) Substrates Grown by Migration-Enhanced Epitaxy

Rao, T. Sudersena, Nozawa, Kazuhiko, Horikoshi, Yoshiji
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Volume:
30
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.30.L547
Date:
April, 1991
File:
PDF, 1.08 MB
1991
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