Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar...

Japanese Journal of Applied Physics 1991 / 3 Vol. 30; Iss. Part 1, No

Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources

Sandhu, Adarsh, Fujii, Toshio, Ando, Hideyasu, Takahashi, Tsuyoshi, Ishikawa, Hideaki, Okamoto, Naoya, Yokoyama, Naoki
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Volume:
30
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.30.464
Date:
March, 1991
File:
PDF, 348 KB
1991
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