Control of GaAs on Si Interface Using Atomic Layer Epitaxy

Japanese Journal of Applied Physics 1990 / 12 Vol. 29; Iss. Part 2, No

Control of GaAs on Si Interface Using Atomic Layer Epitaxy

Kitahara, Kuninori, Ohtsuka, Nobuyuki, Ueda, Osamu, Funagura, Makoto, Ozeki, Masashi
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L2457
Date:
December, 1990
File:
PDF, 677 KB
1990
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