InAs/GaSb Hot Electron Transistors Grown by Low-Pressure...

Japanese Journal of Applied Physics 1990 / 12 Vol. 29; Iss. Part 2, No

InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Taira, Kenichi, Nakamura, Fumihiko, Hase, Ichiro, Kawai, Hiroji, Mori, Yoshifumi
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L2414
Date:
December, 1990
File:
PDF, 340 KB
1990
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