Highly Beryllium-Doped GaInAs Grown by Chemical Beam...

Japanese Journal of Applied Physics 1990 / 12 Vol. 29; Iss. Part 2, No

Highly Beryllium-Doped GaInAs Grown by Chemical Beam Epitaxy

Uchida, Toshi K., Uchida, Takashi, Yokouchi, Noriyuki, Koyama, Fumio, Iga, Kenichi
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.29.l2146
Date:
December, 1990
File:
PDF, 458 KB
1990
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