Incorporation of Arsenic and Gallium in InP Layers in...

Japanese Journal of Applied Physics 1990 / 11 Vol. 29; Iss. Part 1, No

Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE

Wada, Morio, Seko, Masahito, Sakakibara, Katsutoshi, Sekiguchi, Yoichi
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.2342
Date:
November, 1990
File:
PDF, 1.48 MB
1990
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