Low Threading Dislocation Density GaAs on Si(100) with...

Japanese Journal of Applied Physics 1991 / 4 Vol. 30; Iss. Part 2, No

Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy

Nozawa, Kazuhiko, Horikoshi, Yoshiji
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Volume:
30
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.30.L668
Date:
April, 1991
File:
PDF, 1.62 MB
1991
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