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Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III–V semiconductors
Mäkelä, J., Tuominen, M., Kuzmin, M., Yasir, M., Lång, J., Punkkinen, M.P.J., Laukkanen, P., Kokko, K., Schulte, K., Osiecki, J., Wallace, R.M.Volume:
329
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2014.12.155
Date:
February, 2015
File:
PDF, 1.19 MB
english, 2015