Si 2 H 6...

Japanese Journal of Applied Physics 1991 / 10 Vol. 30; Iss. Part 2, No

Si 2 H 6 Doping of InP in Gas-Source Molecular Beam Epitaxy Using Triethylindium and Phosphine

Ando, Hideyasu, Okamoto, Naoya, Sandhu, Adarsh, Fujii, Toshio
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Volume:
30
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.30.L1696
Date:
October, 1991
File:
PDF, 461 KB
1991
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