The Effects of AsH 3 Preflow...

Japanese Journal of Applied Physics 1991 / 11 Vol. 30; Iss. Part 2, No

The Effects of AsH 3 Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition

Asai, Koyu, Fujita, Kazuhisa, Shiba, Yasunari
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Volume:
30
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.30.l1967
Date:
November, 1991
File:
PDF, 1.60 MB
1991
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