Research note. Threshold switching in vanadate devices and...

International Journal of Electronics 1987 / 05 Vol. 62; Iss. 5

Research note. Threshold switching in vanadate devices and the effect of temperature of the V 2 O 5 melt

GATTEF, E., DIMITRIEV, Y.
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Volume:
62
Language:
english
Journal:
International Journal of Electronics
DOI:
10.1080/00207218708921027
Date:
May, 1987
File:
PDF, 136 KB
english, 1987
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