Effect of silicon nitride layers on the minority carrier...

Journal of Applied Physics 2006 Vol. 100; Iss. 11

Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers

J. Toušek, J. Toušková, A. Poruba, P. Hlídek, J. Lörinčík
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Volume:
100
Year:
2006
Language:
english
DOI:
10.1063/1.2390628
File:
PDF, 384 KB
english, 2006
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