In-Depth Profile of Electrical Property of InAs Epitaxial...

Japanese Journal of Applied Physics 1993 / 3 Vol. 32; Iss. Part 2, No

In-Depth Profile of Electrical Property of InAs Epitaxial Layer Grown on Semi-Insulating GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition

Iwamura, Yasuo, Shigeta, Hiroyuki, Watanabe, Naozo
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.L368
Date:
March, 1993
File:
PDF, 495 KB
1993
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