High Performance Double Delta Doping GaAs/In...

Japanese Journal of Applied Physics 1993 / 3 Vol. 32; Iss. Part 2, No

High Performance Double Delta Doping GaAs/In 0.25 Ga 0.75 As/GaAs Pseudomorphic Heterostructure

Shieh, H. M., Hsu, W. C., Wu, C. L., Wu, T. S.
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.L303
Date:
March, 1993
File:
PDF, 419 KB
1993
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