Reduction Mechanism of Dislocation Density in GaAs Films on...

Japanese Journal of Applied Physics 1993 / 1 Vol. 32; Iss. Part 1, No

Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates

Shimomura, Hirofumi, Okada, Yoshitaka, Matsumoto, Hisashi, Kawabe, Mitsuo, Kitami, Yoshizo, Bando, Yoshio
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.632
Date:
January, 1993
File:
PDF, 1.02 MB
1993
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