Misorientation in GaAs on Si Grown by Migration-Enhanced...

Japanese Journal of Applied Physics 1993 / 1 Vol. 32; Iss. Part 1, No

Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy

Nozawa, Kazuhiko, Horikoshi, Yoshiji
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.626
Date:
January, 1993
File:
PDF, 989 KB
1993
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