531 nm Green Lasing of InGaN Based Laser Diodes on...

Applied Physics Express 2009 / 7 Vol. 2

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Enya, Yohei, Yoshizumi, Yusuke, Kyono, Takashi, Akita, Katsushi, Ueno, Masaki, Adachi, Masahiro, Sumitomo, Takamichi, Tokuyama, Shinji, Ikegami, Takatoshi, Katayama, Koji, Nakamura, Takao
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Volume:
2
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.2.082101
Date:
July, 2009
File:
PDF, 370 KB
english, 2009
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