Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs...

Japanese Journal of Applied Physics 1993 / 5 Vol. 32; Iss. Part 1, No

Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity

Itaya, Kazuhiko, Ishikawa, Masayuki, Hatakoshi, Gen-ichi
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.1919
Date:
May, 1993
File:
PDF, 716 KB
1993
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