![](/img/cover-not-exists.png)
Extrinsic Base Surface Recombination Current in GaInP/GaAs Heterojunction Bipolar Transistors with Near-Unity Ideality Factor
Liu, WilliamVolume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.L713
Date:
May, 1993
File:
PDF, 441 KB
1993