Extrinsic Base Surface Recombination Current in GaInP/GaAs...

Japanese Journal of Applied Physics 1993 / 5 Vol. 32; Iss. Part 2, No

Extrinsic Base Surface Recombination Current in GaInP/GaAs Heterojunction Bipolar Transistors with Near-Unity Ideality Factor

Liu, William
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.L713
Date:
May, 1993
File:
PDF, 441 KB
1993
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