High-Quality GaAs Films on Si Substrates Grown by Atomic...

Japanese Journal of Applied Physics 1993 / 10 Vol. 32; Iss. Part 2, No

High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications

Okada, Yoshitaka, Ohta, Shigeru, Shimomura, Hirofumi, Kawabata, Akio, Kawabe, Mitsuo
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.L1556
Date:
October, 1993
File:
PDF, 487 KB
1993
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