High-Quality GaAs/AlAs Buried Heterostructures Grown by...

Japanese Journal of Applied Physics 1993 / 8 Vol. 32; Iss. Part 2, No

High-Quality GaAs/AlAs Buried Heterostructures Grown by Molecular Beam Epitaxy on Patterned Substrates

Saito, Hideaki, Sugimoto, Mitsunori, Anan, Masami, Ochiai, Yukinori
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.L1034
Date:
August, 1993
File:
PDF, 669 KB
1993
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