Comments on “Misorientation in GaAs on Si Grown by...

Comments on “Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy”

Riesz, Ferenc
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.4754
Date:
October, 1993
File:
PDF, 439 KB
1993
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