Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
Shimomura, Satoshi, Wakejima, Akio, Adachi, Akira, Okamoto, Yasunori, Sano, Naokatsu, Murase, Kazuo, Hiyamizu, SatoshiVolume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.32.l1728
Date:
December, 1993
File:
PDF, 1.06 MB
1993