Diffusion Behavior of Point Defects in Si Crystal during...

Japanese Journal of Applied Physics 1994 / 3 Vol. 33; Iss. Part 1, No

Diffusion Behavior of Point Defects in Si Crystal during Melt Growth IV: Numerical Analysis

Habu, Ryuichi, Iwasaki, Toshio, Harada, Hirohumi, Tomiura, Azusa
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Volume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.1234
Date:
March, 1994
File:
PDF, 1.69 MB
1994
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