Improved Crystalline Quality of Molecular Beam Epitaxy...

Japanese Journal of Applied Physics 1994 / 3 Vol. 33; Iss. Part 2, No

Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer

Phua, Cheng Chiang, Chong, Tow Chong, Lau, Wai Shing
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Volume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L405
Date:
March, 1994
File:
PDF, 1.37 MB
1994
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