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X-ray studies of the semiconductors snas, InTe, TlS and TISe UP TO 43 GPa
Demishev, G. B., Kabalkina, S. S., Kolobyanina, T. N., Dyuzheva, T. I., Losev, V. G.Volume:
1
Language:
english
Journal:
High Pressure Research
DOI:
10.1080/08957958908202489
Date:
November, 1989
File:
PDF, 143 KB
english, 1989