Growth Condition Dependence of Carbon Reduction in GaAs...

Japanese Journal of Applied Physics 1994 / 4 Vol. 33; Iss. Part 2, No

Growth Condition Dependence of Carbon Reduction in GaAs Chemical Beam Epitaxy Using Trisdimethylamino-Arsine and Trimethylgallium

Ishikura, Kouji, Takeuchi, Atsushi, Kurihara, Megumu, Machida, Hideaki, Hasegawa, Fumio
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Volume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L494
Date:
April, 1994
File:
PDF, 538 KB
1994
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