Enhanced Electron Mobility in the Inverted High Electron...

Japanese Journal of Applied Physics 1994 / 6 Vol. 33; Iss. Part 2, No

Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth

Washima, Mineo, Mishima, Tomoyoshi, Kudo, Makoto
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Volume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L830
Date:
June, 1994
File:
PDF, 331 KB
1994
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