Numerical Simulation of Backgating Suppression in High Electron Mobility Transistors (HEMTs) with a Low Temperature Molecular Beam Epitaxy (MBE)-Grown Gallium Arsenide Buffer Layer between the Substrate and Active Layers
Tan, Leng Seow, Lau, Wai Shing, Samudra, Ganesh Shankar, Lee, Kin Man, Ang, Boon YongVolume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L826
Date:
June, 1994
File:
PDF, 513 KB
1994