H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic...

Japanese Journal of Applied Physics 1994 / 10 Vol. 33; Iss. Part 2, No

H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition

Ohba, Yasuo, Hatano, Ako
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Volume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.33.l1367
Date:
October, 1994
File:
PDF, 470 KB
1994
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