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Incorporation of Group-V Elements in $\bf Ga_{\ninmbi x}In_{1-{\ninmbi x}}As_{\ninmbi y}P_{1-{\ninmbi y}}$ Layers Grown on GaAs by Gas-Source Molecular Beam Epitaxy
Zhang, G., Asonen, H., Pessa, M.Volume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L1049
Date:
August, 1994
File:
PDF, 552 KB
1994