Emitter Material Comparison between InGaP and InGaAsP in...

Japanese Journal of Applied Physics 1994 / 7 Vol. 33; Iss. Part 2, No

Emitter Material Comparison between InGaP and InGaAsP in GaAs-Based Heterojunction Bipolar Transistors

Ohkubo, Michio, Iketani, Akira, Ikeda, Masakiyo, Ninomiya, Takao
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Volume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L993
Date:
July, 1994
File:
PDF, 404 KB
1994
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