Threading Dislocation Reduction in GaAs on Si with a Single...

Japanese Journal of Applied Physics 1995 / 3 Vol. 34; Iss. Part 1, No

Threading Dislocation Reduction in GaAs on Si with a Single InGaAs Intermediate Layer

Shiba, Yasunari, Asai, Koyu, Kamei, Kazuhito, Katahama, Hisashi
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Volume:
34
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.1466
Date:
March, 1995
File:
PDF, 1.35 MB
1995
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