Heterostructure Fe:InP/InGaAs Metal-Semiconductor...

Japanese Journal of Applied Physics 1995 / 3 Vol. 34; Iss. Part 1, No

Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition

Shei, Shih-Chang, Su, Yan-Kuin, Yokoyama, Meiso
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Volume:
34
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.1413
Date:
March, 1995
File:
PDF, 778 KB
1995
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